IRG4PH50SPBF
IGBT 1200V 57A TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IRG4PH50SPBF offers robust performance for high-voltage switching applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 57 A, with a pulsed rating of 114 A. The Vce(on) is specified at a maximum of 1.7 V at 15 V gate-emitter voltage and 33 A collector current. Designed for through-hole mounting in a TO-247AC package, the IRG4PH50SPBF dissipates up to 200 W. Key switching characteristics include a gate charge of 167 nC and switching energies of 1.8 mJ turn-on and 19.6 mJ turn-off under test conditions of 960 V, 33 A, 5 Ohm, and 15 V. The device operates across a temperature range of -55°C to 150°C. This Infineon Technologies IGBT is suitable for use in motor drives, power supplies, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 33A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 32ns/845ns |
| Switching Energy | 1.8mJ (on), 19.6mJ (off) |
| Test Condition | 960V, 33A, 5Ohm, 15V |
| Gate Charge | 167 nC |
| Current - Collector (Ic) (Max) | 57 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 114 A |
| Power - Max | 200 W |
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