IRG4PH50KPBF
IGBT 1200V 45A TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4PH50KPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This through-hole component, housed in a TO-247AC package, features a collector-emitter voltage rating of 1200V and a continuous collector current capability of 45A, with a pulsed current rating of 90A. It offers a maximum power dissipation of 200W. Key switching characteristics include a gate charge of 180 nC and switching energies of 1.21mJ (on) and 2.25mJ (off) under test conditions of 960V, 24A, 5 Ohm, and 15V. The on-state voltage (Vce(on)) is a maximum of 3.5V at 15V gate-emitter voltage and 24A collector current, with typical turn-on and turn-off delay times of 36ns and 200ns respectively at 25°C. The operating temperature range is -55°C to 150°C (TJ). This device is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 24A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 36ns/200ns |
| Switching Energy | 1.21mJ (on), 2.25mJ (off) |
| Test Condition | 960V, 24A, 5Ohm, 15V |
| Gate Charge | 180 nC |
| Current - Collector (Ic) (Max) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 200 W |
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