IRG4PH30K
IGBT 1200V 20A 100W TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4PH30K, is a high-voltage Insulated Gate Bipolar Transistor designed for demanding power switching applications. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 20A, with a pulsed capability of 40A. Its maximum power dissipation is 100W. The IRG4PH30K offers a low collector-emitter saturation voltage of 4.2V at 15V gate-emitter voltage and 10A collector current, with typical on and off switching energies of 640µJ and 920µJ respectively. The device has a gate charge of 53 nC and a low induction emitter lead for enhanced switching performance. This through-hole component is housed in a TO-247-3 package, also known as TO-247AC. It operates reliably across a wide temperature range of -55°C to 150°C. The IRG4PH30K is suitable for applications in industrial motor control, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4.2V @ 15V, 10A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 28ns/200ns |
| Switching Energy | 640µJ (on), 920µJ (off) |
| Test Condition | 960V, 10A, 23Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 100 W |
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