IRG4PH20KD
IGBT 1200V 11A 60W TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies IRG4PH20KD is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a robust 1200V collector-emitter breakdown voltage and a continuous collector current capability of 11A, with a pulsed rating of 22A. It exhibits a low on-state voltage of 4.3V at 5A, contributing to efficient power dissipation with a maximum power rating of 60W. The device has a typical gate charge of 28 nC, facilitating fast switching speeds with specified turn-on and turn-off delays of 50ns and 100ns respectively at 25°C. Reverse recovery time is rated at 51 ns, and switching energy is quantified at 620µJ (on) and 300µJ (off). Packaged in a TO-247AC (TO-247-3) through-hole format, this IGBT is suitable for industrial applications including motor drives and power supplies. It operates reliably across a wide temperature range from -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 51 ns |
| Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/100ns |
| Switching Energy | 620µJ (on), 300µJ (off) |
| Test Condition | 800V, 5A, 50Ohm, 15V |
| Gate Charge | 28 nC |
| Current - Collector (Ic) (Max) | 11 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 22 A |
| Power - Max | 60 W |
Request a Quote
Clients Also Buy
IRGBF20F
IGBT FAST 900V 20A TO-220AB
IHW15N120R2
IGBT 1200V 30A 357W TO247-3
IKW30N65ET7XKSA1
IGBT TRENCH FS 650V 30A TO247-3
