IRG4PH20K
IGBT 1200V 11A 60W TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT: IRG4PH20K. This high-voltage Insulated Gate Bipolar Transistor features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 11 A (22 A pulsed). With a maximum power dissipation of 60 W and a low on-state voltage of 4.3 V at 15 V gate-emitter voltage and 5 A collector current, this component is suitable for demanding applications. The TO-247AC through-hole package facilitates robust mounting. Key parameters include a 28 nC gate charge and switching energies of 450 µJ (on) and 440 µJ (off) under test conditions of 960 V, 5 A, 50 Ohm, and 15 V. Operating temperature range is -55°C to 150°C (TJ). This device is utilized in power electronics, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 23ns/93ns |
| Switching Energy | 450µJ (on), 440µJ (off) |
| Test Condition | 960V, 5A, 50Ohm, 15V |
| Gate Charge | 28 nC |
| Current - Collector (Ic) (Max) | 11 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 22 A |
| Power - Max | 60 W |
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