IRG4PF50WDPBF
IGBT 900V 51A 200W TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4PF50WDPBF, is a high-performance Insulated Gate Bipolar Transistor designed for demanding power switching applications. This component features a maximum collector current of 51A and a pulsed collector current of 204A, with a collector-emitter voltage breakdown of 900V. The IRG4PF50WDPBF offers a low on-state voltage of 2.7V at 15V gate-emitter voltage and 28A collector current, and a maximum power dissipation of 200W. Its switching characteristics include a typical turn-on delay of 71ns and turn-off delay of 150ns at 25°C, with a reverse recovery time of 90ns. The device is packaged in a TO-247AC (TO-247-3) through-hole package, suitable for efficient thermal management. This IGBT is commonly utilized in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 90 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 28A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 71ns/150ns |
| Switching Energy | 2.63mJ (on), 1.34mJ (off) |
| Test Condition | 720V, 28A, 5Ohm, 15V |
| Gate Charge | 160 nC |
| Current - Collector (Ic) (Max) | 51 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector Pulsed (Icm) | 204 A |
| Power - Max | 200 W |
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