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IRG4PC60U-PPBF

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IRG4PC60U-PPBF

IGBT 600V 75A 520W TO247AC

Manufacturer: Infineon Technologies

Categories: Single IGBTs

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Infineon Technologies IGBT IRG4PC60U-PPBF is a high-performance insulated gate bipolar transistor designed for demanding power conversion applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 75A, with a pulsed current rating of 300A. The IRG4PC60U-PPBF offers a maximum power dissipation of 520W, suitable for high-power switching. Key switching characteristics include a gate charge of 310 nC, with turn-on and turn-off delays of 39ns and 200ns respectively at 25°C, tested under conditions of 480V, 40A, and 5 Ohm with a 15V gate drive. The on-state voltage (Vce(on)) is a maximum of 2V at 15V gate drive and 40A collector current. Packaged in a TO-247AC through-hole configuration, this device is optimized for efficient thermal management. It operates within an ambient temperature range of -55°C to 150°C (TJ). This IGBT is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BagDatasheet:
Technical Details:
PackagingBag
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2V @ 15V, 40A
Supplier Device PackageTO-247AC
IGBT Type-
Td (on/off) @ 25°C39ns/200ns
Switching Energy280µJ (on), 1.1mJ (off)
Test Condition480V, 40A, 5Ohm, 15V
Gate Charge310 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)300 A
Power - Max520 W

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