IRG4PC50K
IGBT 600V 52A 200W TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4PC50K, a high-performance Insulated Gate Bipolar Transistor (IGBT), is engineered for demanding power applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current of 52A (104A pulsed), with a maximum power dissipation of 200W. The 2.2V saturation voltage at 15V gate-emitter voltage and 30A collector current, alongside switching times of 38ns turn-on and 160ns turn-off under specified test conditions, ensures efficient operation. Its low gate charge of 200nC facilitates rapid switching. Designed for through-hole mounting within a TO-247AC package, the IRG4PC50K operates reliably across a wide temperature range of -55°C to 150°C. This device is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 38ns/160ns |
| Switching Energy | 490µJ (on), 680µJ (off) |
| Test Condition | 480V, 30A, 5Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 52 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 104 A |
| Power - Max | 200 W |
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