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IRG4PC30KD

IGBT 600V 28A 100W TO247AC

Manufacturer: Infineon Technologies

Categories: Single IGBTs

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Infineon Technologies IGBT 600 V, 28 A, 100 W, TO-247AC package. This high-performance Insulated Gate Bipolar Transistor (IGBT) offers a collector current of 28 A (58 A pulsed) and a collector-emitter voltage of 600 V. Key parameters include a gate charge of 67 nC, a Vce(on) of 2.7 V at 15 V/16 A, switching energy of 600 µJ (on) and 580 µJ (off), and a reverse recovery time of 42 ns. The device operates within a temperature range of -55°C to 150°C and is suitable for applications requiring efficient power switching in industrial and automotive sectors. This through-hole component is supplied in a TO-247-3 package.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:
Technical Details:
PackagingBag
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)42 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 16A
Supplier Device PackageTO-247AC
IGBT Type-
Td (on/off) @ 25°C60ns/160ns
Switching Energy600µJ (on), 580µJ (off)
Test Condition480V, 16A, 23Ohm, 15V
Gate Charge67 nC
Current - Collector (Ic) (Max)28 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)58 A
Power - Max100 W

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