IRG4P254SPBF
IGBT 250V 98A 200W TO247ACManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4P254SPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This through-hole component features a 250V collector-emitter breakdown voltage and a continuous collector current capability of 98A, with a pulsed current rating of 196A. The device offers a maximum power dissipation of 200W and a low on-state voltage drop of 1.5V at 15V gate-emitter voltage and 55A collector current. Key switching characteristics include a gate charge of 200 nC and switching energies of 380µJ (turn-on) and 3.5mJ (turn-off) under test conditions of 200V, 55A, 5 Ohm, and 15V. The IRG4P254SPBF is packaged in a TO-247AC for robust thermal management and operates across an industrial temperature range of -55°C to 150°C (TJ). This component is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 55A |
| Supplier Device Package | TO-247AC |
| IGBT Type | - |
| Td (on/off) @ 25°C | 40ns/270ns |
| Switching Energy | 380µJ (on), 3.5mJ (off) |
| Test Condition | 200V, 55A, 5Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 98 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Current - Collector Pulsed (Icm) | 196 A |
| Power - Max | 200 W |
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