IRG4IBC30KDPBF
IGBT 600V 17A 45W TO220FPManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT 600V, 17A, 45W, TO-220AB Full-Pak, IRG4IBC30KDPBF. This Insulated Gate Bipolar Transistor offers a 600V collector-emitter breakdown voltage and a continuous collector current of 17A, with a pulsed capability of 34A. Key parameters include a Vce(on) of 2.7V at 15V Vge and 16A Ic, and a gate charge of 67 nC. Switching characteristics are defined by turn-on and turn-off delays of 60ns and 160ns respectively at 25°C, with switching energies of 600µJ (on) and 580µJ (off), tested under 480V, 16A, 23 Ohm, 15V conditions. The device features a reverse recovery time of 42ns. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power conversion and motor control systems. Packaging is in tubes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 42 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 16A |
| Supplier Device Package | TO-220AB Full-Pak |
| IGBT Type | - |
| Td (on/off) @ 25°C | 60ns/160ns |
| Switching Energy | 600µJ (on), 580µJ (off) |
| Test Condition | 480V, 16A, 23Ohm, 15V |
| Gate Charge | 67 nC |
| Current - Collector (Ic) (Max) | 17 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 34 A |
| Power - Max | 45 W |
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