IRG4IBC30FD
IGBT 600V 20.3A 45W TO220FPManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4IBC30FD is a robust IGBT designed for demanding power applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current of 20.3 A, with a pulsed capability of 120 A. The device exhibits a low on-state voltage of 1.8 V at 15 V gate-emitter voltage and 17 A collector current, facilitating efficient power transfer. Key performance metrics include a gate charge of 51 nC and a switching energy of 630 µJ (on) and 1.39 mJ (off), with typical turn-on and turn-off delays of 42 ns and 230 ns respectively at 25°C. The IRG4IBC30FD operates across a wide temperature range of -55°C to 150°C (TJ) and is housed in a PG-TO220-FP package for through-hole mounting. This IGBT is suitable for use in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 42 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A |
| Supplier Device Package | PG-TO220-FP |
| IGBT Type | - |
| Td (on/off) @ 25°C | 42ns/230ns |
| Switching Energy | 630µJ (on), 1.39mJ (off) |
| Test Condition | 480V, 17A, 23Ohm, 15V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 20.3 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 45 W |
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