IRG4IBC20FDPBF
IGBT 600V 14.3A 34W TO220FPManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4IBC20FDPBF is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 14.3A continuous collector current (Ic) and a 64A pulsed collector current (Icm), with a maximum power dissipation of 34W. The Vce(on) is specified at 2V for a Vge of 15V and Ic of 9A, while exhibiting a typical gate charge of 27 nC. Engineered for robust performance, it offers a reverse recovery time (trr) of 37 ns and switching energies of 250µJ (on) and 640µJ (off) at 480V, 9A, 50 Ohm, 15V. The TO-220AB Full-Pak package facilitates through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This IGBT is commonly utilized in industrial motor control, power supplies, and uninterruptible power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 9A |
| Supplier Device Package | TO-220AB Full-Pak |
| IGBT Type | - |
| Td (on/off) @ 25°C | 43ns/240ns |
| Switching Energy | 250µJ (on), 640µJ (off) |
| Test Condition | 480V, 9A, 50Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 14.3 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 64 A |
| Power - Max | 34 W |
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