IRG4IBC20FD
IGBT 600V 14.3A 34W TO220FPManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4IBC20FD is a 600V Insulated Gate Bipolar Transistor (IGBT) designed for high-frequency switching applications. This component features a collector current capability of 14.3A continuous and a pulsed collector current of 64A. With a maximum power dissipation of 34W and a low on-state voltage of 2V at 9A, it offers efficient power handling. The gate charge is 27 nC, contributing to fast switching speeds with typical turn-on delay of 43ns and turn-off delay of 240ns at 25°C. The reverse recovery time is specified at 37ns. The IRG4IBC20FD is housed in a PG-TO220-FP package for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. This device is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 9A |
| Supplier Device Package | PG-TO220-FP |
| IGBT Type | - |
| Td (on/off) @ 25°C | 43ns/240ns |
| Switching Energy | 250µJ (on), 640µJ (off) |
| Test Condition | 480V, 9A, 50Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 14.3 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 64 A |
| Power - Max | 34 W |
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