IRG4CC50WB
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies IRG4CC50WB is a high-performance IGBT die designed for demanding power switching applications. This component features a 600 V collector-emitter breakdown voltage and a low on-state voltage of 2.3V at 15V gate-emitter voltage and 10A collector current, ensuring efficient power handling. The standard input type and surface mount die package facilitate integration into compact power modules. This IGBT is suitable for use in industrial automation, power supplies, and motor control systems where robust and efficient power switching is critical. Its bare die format allows for custom module design and optimization in high-power density applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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