IRG4CC30FB
IGBT CHIPManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4CC30FB is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This surface mount die offers a robust 600V collector-emitter breakdown voltage, making it suitable for power supplies, motor control, and industrial automation. With a Vce(on) of 1.7V at 15V Vge and 6A Ic, it provides efficient power conversion with minimal losses. The standard input type ensures straightforward integration into existing designs. This component is supplied in bulk packaging and is a key element for engineers developing advanced power electronics solutions across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 6A |
| Supplier Device Package | Die |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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