IRG4BH20K-STRLP
IGBT 1200V 11A 60W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IRG4BH20K-STRLP is a 1200V, 11A insulated gate bipolar transistor designed for surface mount applications. This component, housed in a D2PAK (TO-263-3) package, offers a maximum power dissipation of 60W and a continuous collector current of 11A, with a pulsed current capability of 22A. Key performance characteristics include a Vce(on) of 4.3V at 15V Vge and 5A Ic, and switching energies of 450µJ (on) and 440µJ (off) under test conditions of 960V, 5A, 50 Ohm, and 15V. The gate charge is rated at 28 nC, with typical turn-on and turn-off delays of 23ns and 93ns respectively at 25°C. This device is suitable for high-voltage switching applications across various industries, including industrial power supplies and motor control. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 23ns/93ns |
| Switching Energy | 450µJ (on), 440µJ (off) |
| Test Condition | 960V, 5A, 50Ohm, 15V |
| Gate Charge | 28 nC |
| Current - Collector (Ic) (Max) | 11 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 22 A |
| Power - Max | 60 W |