IRG4BH20K-S
IGBT 1200V 11A 60W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4BH20K-S, is a robust power semiconductor designed for demanding applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 11 A, with a pulsed current rating of 22 A. The IRG4BH20K-S offers a maximum power dissipation of 60 W and exhibits typical switching energy of 450 µJ (on) and 440 µJ (off) under a test condition of 960 V, 5 A, 50 Ohm, and 15 V. With a gate charge of 28 nC, it is supplied in a surface mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) package. The operating temperature range spans from -55°C to 150°C. This device is suitable for use in industrial power supplies, motor control, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 23ns/93ns |
| Switching Energy | 450µJ (on), 440µJ (off) |
| Test Condition | 960V, 5A, 50Ohm, 15V |
| Gate Charge | 28 nC |
| Current - Collector (Ic) (Max) | 11 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 22 A |
| Power - Max | 60 W |
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