IRG4BH20K-LPBF
IGBT 1200V 11A 60W TO262Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4BH20K-LPBF, is a high-voltage insulated gate bipolar transistor designed for demanding power applications. This through-hole component features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 11 A, with a pulsed capability of 22 A. The device dissipates up to 60 W and exhibits low switching energy of 450 µJ (on) and 440 µJ (off) under typical test conditions (960 V, 5 A, 50 Ohm, 15 V), with turn-on and turn-off delays of 23 ns and 93 ns respectively. The Vce(on) is rated at a maximum of 4.3 V at 15 V gate-emitter voltage and 5 A collector current. Packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA form factor, this device is suitable for industrial power control and motor drive applications. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
| Supplier Device Package | TO-262 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 23ns/93ns |
| Switching Energy | 450µJ (on), 440µJ (off) |
| Test Condition | 960V, 5A, 50Ohm, 15V |
| Gate Charge | 28 nC |
| Current - Collector (Ic) (Max) | 11 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 22 A |
| Power - Max | 60 W |
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