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IRG4BC40W-S

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IRG4BC40W-S

IGBT 600V 40A 160W D2PAK

Manufacturer: Infineon Technologies

Categories: Single IGBTs

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Infineon Technologies IGBT IRG4BC40W-S is a 600V, 40A insulated gate bipolar transistor designed for surface mount applications. This component features a maximum power dissipation of 160W and a collector current of 40A, with a pulsed collector current capability of 160A. The IRG4BC40W-S exhibits a typical on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 20A collector current. Switching characteristics include turn-on delay (Td(on)) of 27ns and turn-off delay (Td(off)) of 100ns at 25°C, with corresponding switching energies of 110µJ (on) and 230µJ (off) under test conditions of 480V, 20A, 10 Ohm, and 15V. The IGBT is housed in a D2PAK (TO-263-3) package, suitable for demanding thermal management in applications across industrial motor control, power supplies, and automotive systems. It operates within an extended temperature range of -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Supplier Device PackageD2PAK
IGBT Type-
Td (on/off) @ 25°C27ns/100ns
Switching Energy110µJ (on), 230µJ (off)
Test Condition480V, 20A, 10Ohm, 15V
Gate Charge98 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)160 A
Power - Max160 W

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