IRG4BC40W
IGBT 600V 40A 160W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies IRG4BC40W is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a breakdown voltage of 600 V and a continuous collector current rating of 40 A, with a pulsed capability of 160 A. The Vce(on) is rated at a maximum of 2.5 V at 15 V gate-emitter voltage and 20 A collector current. With a gate charge of 98 nC and switching energies of 110 µJ (on) and 230 µJ (off) under the specified test conditions (480V, 20A, 10O, 15V), the IRG4BC40W offers efficient switching characteristics. It is housed in a TO-220AB package for through-hole mounting, supporting an operating temperature range of -55°C to 150°C. This device is suitable for use in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 27ns/100ns |
| Switching Energy | 110µJ (on), 230µJ (off) |
| Test Condition | 480V, 20A, 10Ohm, 15V |
| Gate Charge | 98 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 160 W |
Request a Quote
Clients Also Buy
AUIRGS4062D1
IGBT 600V 59A 246W D2PAK
IKFW90N60EH3XKSA1
IGBT TRENCH FS 600V 77A TO247-3
IGW50N60TPXKSA1
IGBT TRENCH/FS 600V 80A TO247-3
