IRG4BC30W
IGBT 600V 23A 100W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IRG4BC30W is a high-performance insulated-gate bipolar transistor designed for demanding applications. This TO-220AB packaged device offers a 600 V collector-emitter breakdown voltage and a continuous collector current of 23 A, with a pulsed capability of 92 A. The IRG4BC30W features a maximum power dissipation of 100 W and a low on-state voltage of 2.7 V at 15 V gate-emitter voltage and 12 A collector current. Switching characteristics include an on-time of 25 ns and an off-time of 99 ns at 25°C, with switching energy of 130 µJ for both turn-on and turn-off. The operating temperature range spans from -55°C to 150°C. This component is commonly utilized in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/99ns |
| Switching Energy | 130µJ (on), 130µJ (off) |
| Test Condition | 480V, 12A, 23Ohm, 15V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 23 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 92 A |
| Power - Max | 100 W |
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