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IRG4BC30U

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IRG4BC30U

IGBT 600V 23A 100W TO220AB

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRG4BC30U is a 600 V, 23 A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a maximum power dissipation of 100 W and a collector-emitter saturation voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 12 A collector current. The device offers a pulsed collector current (Icm) of 92 A and a gate charge of 50 nC, with switching times of 17 ns turn-on and 78 ns turn-off at 25°C, tested under 480 V, 12 A, 23 Ohm, 15 V conditions. The IRG4BC30U is housed in a TO-220AB package, suitable for through-hole mounting, and operates across an extended temperature range of -55°C to 150°C. Its robust construction and performance characteristics make it suitable for use in industrial motor drives and general-purpose power conversion systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 12A
Supplier Device PackageTO-220AB
IGBT Type-
Td (on/off) @ 25°C17ns/78ns
Switching Energy160µJ (on), 200µJ (off)
Test Condition480V, 12A, 23Ohm, 15V
Gate Charge50 nC
Current - Collector (Ic) (Max)23 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)92 A
Power - Max100 W

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