IRG4BC30S
IGBT 600V 34A 100W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4BC30S, is a high-performance Insulated Gate Bipolar Transistor designed for demanding applications. This through-hole component features a 600 V collector-emitter breakdown voltage and a continuous collector current of 34 A, with a pulsed capability of 68 A. The IRG4BC30S offers a maximum power dissipation of 100 W and a low on-state voltage of 1.6 V at 15 V gate-emitter voltage and 18 A collector current. It exhibits a typical gate charge of 50 nC and switching characteristics with turn-on delay (Td(on)) of 22 ns and turn-off delay (Td(off)) of 540 ns at 25°C, under test conditions of 480 V, 18 A, 23 Ohm, and 15 V. Operating across a wide temperature range of -55°C to 150°C, this device is housed in a TO-220AB package, making it suitable for power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 18A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 22ns/540ns |
| Switching Energy | 260µJ (on), 3.45mJ (off) |
| Test Condition | 480V, 18A, 23Ohm, 15V |
| Gate Charge | 50 nC |
| Current - Collector (Ic) (Max) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 68 A |
| Power - Max | 100 W |
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