IRG4BC30KDSTRLP
IGBT 600V 28A 100W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4BC30KDSTRLP, is a high-performance insulated-gate bipolar transistor designed for demanding applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 28A, with a pulsed capability of 56A. It is housed in a surface-mount D2PAK (TO-263-3, D2PAK) package, facilitating efficient thermal management with a maximum power dissipation of 100W. Key switching characteristics include a gate charge of 67 nC and switching energies of 600µJ (on) and 580µJ (off) under test conditions of 480V, 16A, 23 Ohm, and 15V. The on-state voltage drop (Vce(on)) is a maximum of 2.7V at 15V gate-emitter voltage and 16A collector current. Operating temperature ranges from -55°C to 150°C (TJ). This IGBT is commonly utilized in industrial power supplies, motor control, and uninterruptible power systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 42 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 16A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 60ns/160ns |
| Switching Energy | 600µJ (on), 580µJ (off) |
| Test Condition | 480V, 16A, 23Ohm, 15V |
| Gate Charge | 67 nC |
| Current - Collector (Ic) (Max) | 28 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 56 A |
| Power - Max | 100 W |