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IRG4BC30KD-STRR

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IRG4BC30KD-STRR

IGBT 600V 28A 100W D2PAK

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

The Infineon Technologies IRG4BC30KD-STRR is a 600V, 28A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a maximum collector power dissipation of 100W and a surface mount D2PAK package (TO-263-3, D2PAK) for efficient thermal management. Key electrical specifications include a continuous collector current of 28A, a pulsed collector current of 58A, and a gate charge of 67nC. The IGBT exhibits a Vce(on) of 2.7V at 15V Vge and 16A Ic. Its switching performance is characterized by a reverse recovery time of 42ns and switching energies of 600µJ (on) and 580µJ (off) under test conditions of 480V, 16A, 23 Ohms, and 15V. The operating temperature range is -55°C to 150°C (TJ). This device is commonly utilized in industrial automation, power supplies, and motor control systems. Supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)42 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 16A
Supplier Device PackageD2PAK
IGBT Type-
Td (on/off) @ 25°C60ns/160ns
Switching Energy600µJ (on), 580µJ (off)
Test Condition480V, 16A, 23Ohm, 15V
Gate Charge67 nC
Current - Collector (Ic) (Max)28 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)58 A
Power - Max100 W

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