IRG4BC30F-STRR
IGBT 600V 31A 100W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IRG4BC30F-STRR is a high-performance Insulated Gate Bipolar Transistor designed for demanding applications. This component features a collector-emitter voltage (Vce) of 600 V and a continuous collector current (Ic) of 31 A, with a pulsed capability of 120 A. It offers a maximum power dissipation of 100 W and a low on-state voltage (Vce(on)) of 1.8 V at 15 V gate voltage and 17 A collector current. The device exhibits typical switching times of 21 ns turn-on and 200 ns turn-off at 25°C, with switching energies of 230 µJ on and 1.18 mJ off under specified test conditions. The IRG4BC30F-STRR utilizes a standard input type and is provided in a D2PAK (TO-263-3) surface-mount package, supplied on tape and reel. This component is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 21ns/200ns |
| Switching Energy | 230µJ (on), 1.18mJ (off) |
| Test Condition | 480V, 17A, 23Ohm, 15V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 31 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 100 W |
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