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IRG4BC30F-S

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IRG4BC30F-S

IGBT 600V 31A 100W D2PAK

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IGBT IRG4BC30F-S is a high-performance Insulated Gate Bipolar Transistor designed for demanding power electronics applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 31 A, with a pulsed capability of 120 A. The IRG4BC30F-S exhibits a low on-state voltage of 1.8 V at 15 V gate-emitter voltage and 17 A collector current, contributing to reduced conduction losses. Switching characteristics include a typical turn-on delay of 21 ns and turn-off delay of 200 ns, with switching energies of 230 µJ on and 1.18 mJ off under specified test conditions (480 V, 17 A, 23 Ohm, 15 V). With a maximum power dissipation of 100 W and a gate charge of 51 nC, it is suitable for applications requiring efficient power switching. The device is packaged in a D2PAK (TO-263-3, D2PAK) surface-mount package, ideal for high-density board layouts. Its robust design makes it a reliable choice for industrial motor drives, power supplies, and uninterruptible power supplies.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 17A
Supplier Device PackageD2PAK
IGBT Type-
Td (on/off) @ 25°C21ns/200ns
Switching Energy230µJ (on), 1.18mJ (off)
Test Condition480V, 17A, 23Ohm, 15V
Gate Charge51 nC
Current - Collector (Ic) (Max)31 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)120 A
Power - Max100 W

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