IRG4BC30F
IGBT 600V 31A 100W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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The Infineon Technologies IRG4BC30F is a high-performance Insulated Gate Bipolar Transistor designed for demanding applications. This TO-220AB packaged device offers a robust 600V collector-emitter breakdown voltage and a continuous collector current capability of 31A, with a pulsed capability of up to 120A. Featuring a maximum power dissipation of 100W and a low on-state voltage of 1.8V at 15V gate-emitter voltage and 17A collector current, it ensures efficient power transfer. The device exhibits excellent switching characteristics with typical turn-on delay of 21ns and turn-off delay of 200ns at 25°C, alongside switching energies of 230µJ (on) and 1.18mJ (off). The gate charge is specified at 51 nC. This component is suitable for use in industrial power supplies, motor control, and high-frequency switching applications. It is supplied in tube packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 21ns/200ns |
| Switching Energy | 230µJ (on), 1.18mJ (off) |
| Test Condition | 480V, 17A, 23Ohm, 15V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 31 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 100 W |
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