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IRG4BC20WPBF

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IRG4BC20WPBF

IGBT 600V 13A 60W TO220AB

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRG4BC20WPBF is a 600V, 13A Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a maximum power dissipation of 60W and a collector current of 13A, with a pulsed current capability of 52A. The IRG4BC20WPBF exhibits a Vce(on) of 2.6V at 15V gate-emitter voltage and 6.5A collector current. Key switching characteristics include a gate charge of 26nC and switching energies of 60µJ (on) and 80µJ (off) under test conditions of 480V, 6.5A, 50 Ohm, and 15V. It operates across a temperature range of -55°C to 150°C. The device is housed in a standard TO-220AB package, suitable for through-hole mounting. This IGBT is commonly utilized in industrial motor drives, power supplies, and welding equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 6.5A
Supplier Device PackageTO-220AB
IGBT Type-
Td (on/off) @ 25°C22ns/110ns
Switching Energy60µJ (on), 80µJ (off)
Test Condition480V, 6.5A, 50Ohm, 15V
Gate Charge26 nC
Current - Collector (Ic) (Max)13 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)52 A
Power - Max60 W

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