IRG4BC20W-SPBF
IGBT 600V 13A 60W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4BC20W-SPBF, is a high-performance Insulated Gate Bipolar Transistor designed for demanding power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 13 A, with a pulsed capability of 52 A. The IRG4BC20W-SPBF offers a maximum power dissipation of 60 W and a low on-state voltage of 2.6 V at 15 V gate-emitter voltage and 6.5 A collector current. Switching characteristics include turn-on and turn-off delays of 22 ns and 110 ns respectively, with switching energies of 60 µJ (on) and 80 µJ (off) at the specified test conditions. Packaged in a D2PAK (TO-263-3) surface-mount configuration, this device is suited for industrial automation, power supplies, and motor control applications, operating across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 6.5A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 22ns/110ns |
| Switching Energy | 60µJ (on), 80µJ (off) |
| Test Condition | 480V, 6.5A, 50Ohm, 15V |
| Gate Charge | 26 nC |
| Current - Collector (Ic) (Max) | 13 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 52 A |
| Power - Max | 60 W |
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