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IRG4BC20W-S

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IRG4BC20W-S

IGBT 600V 13A 60W D2PAK

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRG4BC20W-S is a 600V, 13A Insulated Gate Bipolar Transistor (IGBT) designed for surface mount applications. This component, housed in a D2PAK (TO-263-3) package, offers a continuous collector current of 13A and a pulsed collector current of 52A. Key electrical characteristics include a Vce(on) of 2.6V at 15V gate drive and 6.5A collector current, with a gate charge of 26nC. The device exhibits typical switching energies of 60µJ (on) and 80µJ (off) under test conditions of 480V, 6.5A, 50 Ohm, and 15V gate drive. Operating temperature ranges from -55°C to 150°C. This IGBT is suitable for power switching applications in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 6.5A
Supplier Device PackageD2PAK
IGBT Type-
Td (on/off) @ 25°C22ns/110ns
Switching Energy60µJ (on), 80µJ (off)
Test Condition480V, 6.5A, 50Ohm, 15V
Gate Charge26 nC
Current - Collector (Ic) (Max)13 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)52 A
Power - Max60 W

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