IRG4BC20UD-STRR
IGBT 600V 13A 60W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4BC20UD-STRR, is a 600V, 13A Insulated Gate Bipolar Transistor designed for surface mount applications. This component features a 60W power dissipation and a D2PAK package (TO-263-3, D2PAK) for efficient thermal management. Key electrical characteristics include a collector current of 13A (52A pulsed), a gate charge of 27 nC, and a Vce(on) of 2.1V at 15V and 6.5A. The switching characteristics are specified with a reverse recovery time of 37 ns and switching energy values of 160µJ (on) and 130µJ (off) under test conditions of 480V, 6.5A, 50 Ohm, and 15V. Operating temperature ranges from -55°C to 150°C (TJ). This device is suitable for use in power conversion applications across various industries, including industrial automation and power supplies. The IRG4BC20UD-STRR is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 6.5A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 39ns/93ns |
| Switching Energy | 160µJ (on), 130µJ (off) |
| Test Condition | 480V, 6.5A, 50Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 13 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 52 A |
| Power - Max | 60 W |
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