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IRG4BC20UD-STRL

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IRG4BC20UD-STRL

IGBT 600V 13A 60W D2PAK

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRG4BC20UD-STRL is a 600V, 13A Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. This component features a maximum power dissipation of 60W and a collector current of 13A, with a pulsed current capability of 52A. The gate charge is specified at 27 nC, and the on-state voltage (Vce(on)) is a maximum of 2.1V at 15V gate-emitter voltage and 6.5A collector current. Its reverse recovery time (trr) is 37 ns, with switching energy figures of 160µJ (on) and 130µJ (off) under test conditions of 480V, 6.5A, 50 Ohm, and 15V. Packaged in a D2PAK (TO-263-3) surface mount configuration and supplied on tape and reel, the IRG4BC20UD-STRL operates across a temperature range of -55°C to 150°C. This device is suitable for use in industrial motor drives, power supplies, and general-purpose inverters.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)37 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 6.5A
Supplier Device PackageD2PAK
IGBT Type-
Td (on/off) @ 25°C39ns/93ns
Switching Energy160µJ (on), 130µJ (off)
Test Condition480V, 6.5A, 50Ohm, 15V
Gate Charge27 nC
Current - Collector (Ic) (Max)13 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)52 A
Power - Max60 W

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