IRG4BC20SDPBF
IGBT 600V 19A 60W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT 600V 19A 60W, part number IRG4BC20SDPBF, is a high-performance insulated gate bipolar transistor designed for demanding applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 19A, with a pulsed capability of 38A. The device offers a low on-state voltage (Vce(on)) of 1.6V at 15V gate-emitter voltage and 10A collector current, contributing to efficient power conversion. With a maximum power dissipation of 60W and a gate charge of 27nC, the IRG4BC20SDPBF is suitable for power switching applications. It exhibits switching energy characteristics of 320µJ (on) and 2.58mJ (off) under specified test conditions. The TO-220AB package facilitates through-hole mounting and operates across a wide temperature range of -55°C to 150°C. This IGBT is commonly utilized in power supplies, industrial motor control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 10A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 62ns/690ns |
| Switching Energy | 320µJ (on), 2.58mJ (off) |
| Test Condition | 480V, 10A, 50Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 19 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 38 A |
| Power - Max | 60 W |
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