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IRG4BC20S

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IRG4BC20S

IGBT 600V 19A 60W TO220AB

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRG4BC20S is a 600V, 19A Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring efficient power switching. This component features a maximum continuous collector current of 19A and a pulsed collector current of 38A, with a maximum power dissipation of 60W. The IGBT exhibits a low on-state voltage of 1.6V at 15V gate-source voltage and 10A collector current, and a gate charge of 27 nC. Switching characteristics include turn-on delay of 27ns and turn-off delay of 540ns at 25°C, with switching energies of 120µJ (on) and 2.05mJ (off) under specified test conditions. The IRG4BC20S is housed in a TO-220AB package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 150°C. This device is suitable for use in industrial motor drives, power supplies, and other power control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.6V @ 15V, 10A
Supplier Device PackageTO-220AB
IGBT Type-
Td (on/off) @ 25°C27ns/540ns
Switching Energy120µJ (on), 2.05mJ (off)
Test Condition480V, 10A, 50Ohm, 15V
Gate Charge27 nC
Current - Collector (Ic) (Max)19 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)38 A
Power - Max60 W

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