IRG4BC20KDPBF
IGBT 600V 16A 60W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4BC20KDPBF is a 600V, 16A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. Featuring a maximum collector power dissipation of 60W and a pulsed collector current of 32A, this component is suitable for demanding industrial and automotive environments. The TO-220AB package with 3 leads facilitates through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage (Vce(on)) of 2.8V at 15V gate-source voltage and 9A collector current, and a gate charge of 34 nC. Switching characteristics are defined by a turn-on delay (Td(on)) of 54ns and turn-off delay (Td(off)) of 180ns at 25°C, with switching energies of 340µJ (on) and 300µJ (off) under test conditions of 480V, 9A, 50 Ohm, and 15V. The device operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 9A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 54ns/180ns |
| Switching Energy | 340µJ (on), 300µJ (off) |
| Test Condition | 480V, 9A, 50Ohm, 15V |
| Gate Charge | 34 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 32 A |
| Power - Max | 60 W |
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