IRG4BC20KD-STRR
IGBT 600V 16A 60W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT 600 V, 16 A, 60 W, D2PAK package, IRG4BC20KD-STRR. This high-performance insulated-gate bipolar transistor features a collector current of 16 A (32 A pulsed) and a collector-emitter breakdown voltage of 600 V. With a maximum power dissipation of 60 W and a low on-state voltage (Vce(on)) of 2.8 V at 15 V gate-source voltage and 9 A collector current, it offers efficient switching. The device exhibits a gate charge of 34 nC and switching energies of 340 µJ (on) and 300 µJ (off) under test conditions of 480 V, 9 A, 50 Ohm, and 15 V. The TO-263-3, D2PAK (2 Leads + Tab) package is suitable for surface mounting. Operating temperature range is -55°C to 150°C. This component is commonly utilized in industrial applications such as motor control, power supplies, and automotive systems. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 9A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 54ns/180ns |
| Switching Energy | 340µJ (on), 300µJ (off) |
| Test Condition | 480V, 9A, 50Ohm, 15V |
| Gate Charge | 34 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 32 A |
| Power - Max | 60 W |
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