IRG4BC20KD-S
IGBT 600V 16A 60W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT IRG4BC20KD-S is a 600V, 16A Insulated Gate Bipolar Transistor designed for high-efficiency power switching applications. This component features a maximum collector current of 16A and a pulsed collector current of 32A. The device exhibits a low on-state voltage of 2.8V at 15V gate-emitter voltage and 9A collector current. With a gate charge of 34 nC and switching energies of 340µJ (on) and 300µJ (off) under test conditions of 480V, 9A, 50 Ohm, and 15V, it offers optimized switching performance. The to-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package facilitates efficient thermal management, operating across a temperature range of -55°C to 150°C (TJ). This IGBT is suitable for use in industrial motor control, power supplies, and lighting applications, delivering 60W maximum power dissipation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 9A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 54ns/180ns |
| Switching Energy | 340µJ (on), 300µJ (off) |
| Test Condition | 480V, 9A, 50Ohm, 15V |
| Gate Charge | 34 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 32 A |
| Power - Max | 60 W |
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