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IRG4BC20FPBF

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IRG4BC20FPBF

IGBT 600V 16A 60W TO220AB

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRG4BC20FPBF is a 600 V, 16 A Insulated Gate Bipolar Transistor (IGBT) in a TO-220AB package. This through-hole component offers a maximum power dissipation of 60 W and a continuous collector current of 16 A, with a pulsed capability of 64 A. Key switching characteristics include a gate charge of 27 nC, a turn-on delay (Td(on)) of 24 ns, and a turn-off delay (Td(off)) of 190 ns at 25°C, tested under conditions of 480 V, 9 A, 50 Ohm, and 15 V. The on-state voltage (Vce(on)) is a maximum of 2 V at 15 V gate-emitter voltage and 9 A collector current. Switching energy is specified at 70 µJ for turn-on and 600 µJ for turn-off. The operating temperature range is from -55°C to 150°C. This component is suitable for applications in power conversion and motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2V @ 15V, 9A
Supplier Device PackageTO-220AB
IGBT Type-
Td (on/off) @ 25°C24ns/190ns
Switching Energy70µJ (on), 600µJ (off)
Test Condition480V, 9A, 50Ohm, 15V
Gate Charge27 nC
Current - Collector (Ic) (Max)16 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)64 A
Power - Max60 W

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