IRG4BC20FD-S
IGBT 600V 16A 60W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT 600V 16A 60W, part number IRG4BC20FD-S, is a surface-mount Insulated Gate Bipolar Transistor designed for high-power switching applications. This component features a collector current capability of 16A, with a pulsed current rating of 64A. The collector-emitter breakdown voltage is rated at 600V. Key parameters include a gate charge of 27 nC and a reverse recovery time of 37 ns. The on-state voltage (Vce(on)) is a maximum of 2V at 15V gate-emitter voltage and 9A collector current, with switching energy specified at 250µJ (on) and 640µJ (off) under test conditions of 480V, 9A, 50 Ohm, and 15V. The D2PAK (TO-263-3) package ensures efficient thermal management for demanding operating temperatures ranging from -55°C to 150°C. This device is suitable for use in industrial power supplies, motor control, and uninterruptible power supplies (UPS).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 9A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 43ns/240ns |
| Switching Energy | 250µJ (on), 640µJ (off) |
| Test Condition | 480V, 9A, 50Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 64 A |
| Power - Max | 60 W |
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