IRG4BC20FD
IGBT 600V 16A 60W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4BC20FD is a 600V, 16A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, housed in a TO-220AB package, features a maximum collector current of 16A and a pulsed collector current of 64A. With a Vce(on) of 2V at 9A and 15V gate drive, it offers efficient power handling with a maximum power dissipation of 60W. Key performance parameters include a gate charge of 27 nC, switching energies of 250µJ (on) and 640µJ (off) under test conditions of 480V, 9A, 50 Ohm, and 15V, and a reverse recovery time of 37 ns. The IRG4BC20FD is suitable for demanding applications across industrial motor control and power supply sectors. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 37 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 9A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 43ns/240ns |
| Switching Energy | 250µJ (on), 640µJ (off) |
| Test Condition | 480V, 9A, 50Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 64 A |
| Power - Max | 60 W |
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