IRG4BC20F-S
IGBT 600V 16A 60W TO220-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4BC20F-S, is a high-performance Insulated Gate Bipolar Transistor designed for demanding applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current of 16 A, with a pulsed capability of 64 A. The IRG4BC20F-S offers a maximum power dissipation of 60 W and a low on-state voltage of 2 V at 15 V gate-emitter voltage and 9 A collector current, as per the test condition 480V, 9A, 50Ohm, 15V. Switching characteristics include a gate charge of 27 nC and typical turn-on and turn-off delays of 24 ns and 190 ns respectively, with corresponding switching energies of 70 µJ (on) and 600 µJ (off). Packaged in a TO-220AB (TO-220-3) through-hole configuration, this device operates across a wide temperature range of -55°C to 150°C. It is commonly utilized in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 9A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 24ns/190ns |
| Switching Energy | 70µJ (on), 600µJ (off) |
| Test Condition | 480V, 9A, 50Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 64 A |
| Power - Max | 60 W |
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