IRG4BC20F
IGBT 600V 16A 60W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4BC20F, a high-performance Insulated Gate Bipolar Transistor (IGBT), is designed for demanding power switching applications. This through-hole component features a 600V collector-emitter breakdown voltage and a continuous collector current (Ic) capability of 16A, with a pulsed current (Icm) rating up to 64A. The IRG4BC20F delivers a maximum power dissipation of 60W and exhibits a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 9A collector current. Key switching characteristics include a gate charge of 27 nC, with typical turn-on delay (Td(on)) of 24ns and turn-off delay (Td(off)) of 190ns at 25°C. Switching energy is specified at 70µJ for turn-on and 600µJ for turn-off, tested under 480V, 9A, 50 Ohm, and 15V conditions. Operating across a wide temperature range from -55°C to 150°C (TJ), this IGBT is housed in a standard TO-220AB package. Its robust design makes it suitable for industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 9A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 24ns/190ns |
| Switching Energy | 70µJ (on), 600µJ (off) |
| Test Condition | 480V, 9A, 50Ohm, 15V |
| Gate Charge | 27 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 64 A |
| Power - Max | 60 W |
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