IRG4BC15UD
IGBT 600V 14A 49W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies presents the IRG4BC15UD, a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current (Ic) of 14 A, with a pulsed capability (Icm) of 42 A. The IGBT type is standard, with a gate charge of 23 nC. The IRG4BC15UD offers a maximum power dissipation of 49 W and a low on-state voltage (Vce(on)) of 2.4 V at 15 V Vge and 7.8 A Ic. Switching characteristics include an on-state time (Td(on)) of 17 ns and an off-state time (Td(off)) of 160 ns at 25°C, with a reverse recovery time (trr) of 28 ns. Switching energy is rated at 240 µJ (on) and 260 µJ (off) under test conditions of 480 V, 7.8 A, 75 Ohm, and 15 V. Packaged in a TO-220AB (TO-220-3) for through-hole mounting, this device operates across a wide temperature range of -55°C to 150°C (TJ). It is commonly utilized in power electronics for industries such as industrial automation and motor control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 28 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 7.8A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 17ns/160ns |
| Switching Energy | 240µJ (on), 260µJ (off) |
| Test Condition | 480V, 7.8A, 75Ohm, 15V |
| Gate Charge | 23 nC |
| Current - Collector (Ic) (Max) | 14 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 42 A |
| Power - Max | 49 W |
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