IRG4BC10SD-S
IGBT 600V 14A 38W D2PAKManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IGBT, part number IRG4BC10SD-S, is a discrete high-performance Insulated Gate Bipolar Transistor. This component features a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 14A, with a pulsed capability of 18A. The IGBT offers a low on-state voltage of 1.8V at 15V gate-emitter voltage and 8A collector current, with a power dissipation rating of 38W. It exhibits a switching energy of 310µJ (on) and 3.28mJ (off) under test conditions of 480V, 8A, 100 Ohm, and 15V. The device operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-263-3, D2PAK surface-mount configuration, this IGBT is suitable for applications in industrial motor control, power supplies, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 28 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
| Supplier Device Package | D2PAK |
| IGBT Type | - |
| Td (on/off) @ 25°C | 76ns/815ns |
| Switching Energy | 310µJ (on), 3.28mJ (off) |
| Test Condition | 480V, 8A, 100Ohm, 15V |
| Gate Charge | 15 nC |
| Current - Collector (Ic) (Max) | 14 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
| Power - Max | 38 W |
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