IRG4BC10KDPBF
IGBT 600V 9A 38W TO220ABManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies' IGBT IRG4BC10KDPBF is a high-performance discrete Insulated Gate Bipolar Transistor designed for demanding power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 9A, with a pulsed current rating of 18A. The IRG4BC10KDPBF exhibits a low on-state voltage of 2.62V at 15V Vge and 5A Ic, contributing to efficient operation. Switching characteristics include typical on and off switching energies of 250µJ and 140µJ respectively, with turn-on and turn-off delays of 49ns and 97ns at 25°C. The device is housed in a standard TO-220AB through-hole package, suitable for robust thermal management. Operating temperature ranges from -55°C to 150°C (TJ). This IGBT is commonly utilized in industrial automation, motor control, and power supply systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.62V @ 15V, 5A |
| Supplier Device Package | TO-220AB |
| IGBT Type | - |
| Td (on/off) @ 25°C | 49ns/97ns |
| Switching Energy | 250µJ (on), 140µJ (off) |
| Test Condition | 480V, 5A, 100Ohm, 15V |
| Gate Charge | 19 nC |
| Current - Collector (Ic) (Max) | 9 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
| Power - Max | 38 W |
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