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IRG4BC10K

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IRG4BC10K

IGBT 600V 9A 38W TO220AB

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies IRG4BC10K is a 600V, 9A Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 38W. This through-hole component, packaged in a TO-220AB, features a collector current of 9A and a pulsed collector current of 18A. The gate charge is specified at 19 nC, with typical turn-on and turn-off delay times of 11ns and 51ns respectively at 25°C. The on-state voltage (Vce(on)) is a maximum of 2.62V at 15V gate-emitter voltage and 5A collector current. Switching energy is rated at 160µJ for turn-on and 100µJ for turn-off, with test conditions of 480V, 5A, 100 Ohm, and 15V. The operating temperature range is -55°C to 150°C. This device is suitable for applications in industrial motor control and power supplies.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.62V @ 15V, 5A
Supplier Device PackageTO-220AB
IGBT Type-
Td (on/off) @ 25°C11ns/51ns
Switching Energy160µJ (on), 100µJ (off)
Test Condition480V, 5A, 100Ohm, 15V
Gate Charge19 nC
Current - Collector (Ic) (Max)9 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)18 A
Power - Max38 W

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