IRG4BAC50W-S
IGBT 600V 55A 200W SUPER 220Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IRG4BAC50W-S is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 600V collector-emitter breakdown voltage and a maximum collector current of 55A. With a power dissipation capability of 200W, it is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment. The device offers a low on-state voltage of 2.3V at 15V gate-emitter voltage and 27A collector current, with typical switching times of 46ns turn-on and 120ns turn-off. Packaged in a SUPER-220™ (TO-273AA) through-hole configuration, the IRG4BAC50W-S is supplied in tubes for efficient assembly.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-273AA |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 27A |
| Supplier Device Package | SUPER-220™ (TO-273AA) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 46ns/120ns |
| Switching Energy | 80µJ (on), 320µJ (off) |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 200 W |
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