IKY75N120CS6XKSA1
IGBT TRENCH FS 1200V 150A TO247Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies IKY75N120CS6XKSA1 is a TrenchStop™ series Insulated Gate Bipolar Transistor (IGBT) featuring a 1200 V collector-emitter breakdown voltage and a continuous collector current of 150 A. This device offers a maximum power dissipation of 880 W and is housed in a PG-TO247-4-2 package for through-hole mounting. Key performance characteristics include a Vce(on) of 2.15 V at 15 V gate-emitter voltage and 75 A collector current, a gate charge of 530 nC, and a reverse recovery time of 205 ns. Switching energy is rated at 2.2 mJ (on) and 2.95 mJ (off) under test conditions of 600 V, 75 A, 4 Ohm, and 15 V. The operating temperature range is -40°C to 175°C. This component is suitable for applications in power conversion, industrial motor drives, and renewable energy systems.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 205 ns |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 75A |
| Supplier Device Package | PG-TO247-4-2 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 32ns/300ns |
| Switching Energy | 2.2mJ (on), 2.95mJ (off) |
| Test Condition | 600V, 75A, 4Ohm, 15V |
| Gate Charge | 530 nC |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 880 W |
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